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Optimization of a down conversion mixer circuit formation in a hetero structure for increasing of elements density dependences of technological process on porosity of the considered materials and stress, which was induced by mismatch of lattice parameters

Author Affiliations

  • 1Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia

Res. J. Mathematical & Statistical Sci., Volume 10, Issue (2), Pages 1-18, September,12 (2022)


We consider an analytical approach to model mass and heat transport (with account nonlinearity) with time and space varying parameters has been introduced. Using the approach leads to prediction of heat and mass transport framework a heterostructure. The approach also gives a possibility do not use cross linking of solution on interfaces framework the heterostructure. Based on the approach we analyzed possibility to increase field-effect heterotransistors density in a down conversion mixer circuit. We obtain, that to increase the density of these transistors one shall manufacture them in a heterostructure, which has appropriate composition. Some appropriate areas of the considered heterostructure must be doped by using ion implantation or diffusion. After the doping it should be done of radiation defects annealing optimization, generated during ion implantation, and infused dopant. We also obtained conditions to decrease mismatch-induced stress, which was generated in layers of heterostructure.


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