International Science Community Association Research Journal of Recent Sciences 2277-2502 7 7 2018 07 2 Design of complementary metal oxide semiconductor inverter 31 34 EN Saada Mariem 1 Laboratoire des Plantes Aromatiques et Médicinales, Centre de Biotechnologie de Borj-Cédria (CBBC), BP 901, 2050 Hammam-lif, Tunisia Kasmi Mariam 2 High School of Food Industry of Tunis (ESIAT), University of Carthage,Cité El Khadhra 1003, Tunisia and Laboratoire de Traitement et de Valorisation des Rejets Hydriques (LTVRH), Water Researches and Technologies Center (CERTE), University of Carthage, Tourist route Soliman, BP 273-8020 Nabeul, Tunisia Ben Jemaa Mariem 3 Laboratoire des Plantes Aromatiques et Médicinales, Centre de Biotechnologie de Borj-Cédria (CBBC), BP 901, 2050 Hammam-lif, Tunisia Ksouri Riadh 4 Laboratoire des Plantes Aromatiques et Médicinales, Centre de Biotechnologie de Borj-Cédria (CBBC), BP 901, 2050 Hammam-lif, Tunisia N. Bharadwaj 1 Department of Environmental Science, Tezpur University, Tezpur, Assam, India N. Gogoi 2 Department of Environmental Science, Tezpur University, Tezpur, Assam, India S. Barthakur 3 National Research on Plant Biotechnology, Pusa Campus, New Delhi, India N. Basumatary 4 Department of Environmental Science, Tezpur University, Tezpur, Assam, India Sumedha Chhetri 1 Community Health Nursing, Swami Rama Himalayan University, Dehradun, Uttarakhand, India Sadhana Kandari 2 Community Health Nursing, Swami Rama Himalayan University, Dehradun, Uttarakhand, India Monika Khampa 3 Community Health Nursing, Swami Rama Himalayan University, Dehradun, Uttarakhand, India Neha Pal 4 Community Health Nursing, Swami Rama Himalayan University, Dehradun, Uttarakhand, India Seema Chaudhary 5 Community Health Nursing, Swami Rama Himalayan University, Dehradun, Uttarakhand, India Vandana Chauhan 6 Community Health Nursing, Swami Rama Himalayan University, Dehradun, Uttarakhand, India Preeti Prabha 7 Community Health Nursing, Swami Rama Himalayan University, Dehradun, Uttarakhand, India Manjubala Dash 1 MTPG & RIHS, Puducherry, India Farhat A. Ansari 1 Department of Applied Science, JETGI, Faculty of Engineering, Barabanki, UP, India Yaser S. Siddiqui 2 Department of Civil Engineering, JETGI, Faculty of Engineering, Barabanki, UP, India Maita Raj Ghalley 1 Department of Electronics and Communication Engineering, College of Science and Technology Rinchending, Phuntsholing, Bhutan Phub Zam 2 Department of Electronics and Communication Engineering, College of Science and Technology Rinchending, Phuntsholing, Bhutan Purna B. Samal 3 Department of Electronics and Communication Engineering, College of Science and Technology Rinchending, Phuntsholing, Bhutan > Short Review Paper 2017 11 15 2018 07 2 Power MOSFET IRF9140 and IRF150 from OrCAD library were used to design the CMOS inverter. Keeping their size in the ratio of 2:1 the design and evaluations are carried out through simulation in OrCAD capture environment. The inverter circuit is optimized to yield the optimal noise margin and time delay response. The evaluation presents the analysis of voltage transfer characteristics and its transient response. Through the evaluation of voltage transfer characteristics, high noise margin of 4.80V and low noise margin of 4.56V is achieved. The evaluated maximum power dissipation is 48W. The evaluation of transient response resulted into the rise and fall time delay of 0.057µS and 0.048µS. The paper presents the detailed evaluation of power MOSFET based CMOS inverter. Copyright@ International Science Community Association