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Novel Characteristics of Junction less Dual Metal Cylindrical Surround Gate (JLDM CSG) MOSFETs

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Author Affiliations

  • 1Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam – 788 010, INDIA
  • 2

Res. J. Recent Sci., Volume 2, Issue (1), Pages 44-52, January,2 (2013)

Abstract

After the fabrication of a junction less (JL) transistor by the Colinge et al at Tyndall National Institute, it is now considered a substitute for the junction transistors at highly scaled dimensions. One of the biggest advantages reported is its current driving capability. Being a depletion mode device it is normally ON device and has to be switched OFF by applying a certain gate voltage. In this paper we have explored some novel characteristics of a junction less dual metal (JLDM) CSG MOSFET using 3D numerical simulations and compared it with a standard JL single metal (JLSM) transistor of identical dimensions. Some interesting properties of the JLDM has been revealed not reported earlier. Many analog and RF performance parameters of JLDM such as transconductance gm, TGF gm/TD, early voltage VEA, unit-gain cutoff frequency fT, maximum frequency of oscillation fMAX, gain bandwidth product (GBW) etc. have been observed to have improved values as compared to the JLSM.

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